Technical parameters/dissipated power: 88W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 1100pF @25V(Vds)
Technical parameters/dissipated power (Max): 88W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z34
|
International Rectifier | 功能相似 | TO-220 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
||
IRF9Z34
|
VISHAY | 功能相似 | TO-220 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
||
IRF9Z34
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
||
IRF9Z34
|
Kersemi Electronic | 功能相似 |
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
|||
IRF9Z34PBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET P-CH 60V 18A TO-220AB
|
||
IRF9Z34PBF
|
International Rectifier | 类似代替 | TO-220 |
MOSFET P-CH 60V 18A TO-220AB
|
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