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Model IRF9Z34
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Product QR code
Brand: International Rectifier
Packaging TO-220
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8375) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-60.0 V

 

Technical parameters/rated current:

-18.0 A

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/drain source voltage (Vds):

60.0 V

 

Technical parameters/Continuous drain current (Ids):

18.0 A

 

Technical parameters/rise time:

120 ns

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-220

 

Dimensions/Packaging:

TO-220

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF9Z34 IRF9Z34 International Rectifier 功能相似 TO-220
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
PDF
IRF9Z34 IRF9Z34 VISHAY 功能相似 TO-220
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
PDF
IRF9Z34 IRF9Z34 Vishay Siliconix 功能相似 TO-220-3
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
PDF
IRF9Z34 IRF9Z34 Kersemi Electronic 功能相似
Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
PDF
IRF9Z34PBF IRF9Z34PBF Vishay Siliconix 类似代替 TO-220-3
MOSFET P-CH 60V 18A TO-220AB
PDF
IRF9Z34PBF IRF9Z34PBF International Rectifier 类似代替 TO-220
MOSFET P-CH 60V 18A TO-220AB
PDF

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