Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): -40.0 A
Technical parameters/Input capacitance (Ciss): 2780pF @25V(Vds)
Technical parameters/rated power (Max): 3.1 W
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB34P10TM
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FQB34P10TM 晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
|
||
FQB47P06TM_AM002
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
|
||
FQB47P06TM_AM002
|
ON Semiconductor | 功能相似 | TO-263 |
FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
|
||
IRF5210SPBF
|
International Rectifier | 类似代替 | TO-263-3 |
INFINEON IRF5210SPBF 晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
|
||
IRF5210SPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRF5210SPBF 晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
|
||
IRF5210STRLPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRF5210STRLPBF 场效应管, MOSFET, P沟道, -100V, 40A D2-PAK, 整卷
|
||
NTB25P06T4G
|
ON Semiconductor | 功能相似 | TO-263-3 |
P 通道功率 MOSFET，30V 至 500V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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