Technical parameters/dissipated power: 3.75 W
Technical parameters/Input capacitance (Ciss): 2800pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.75 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 类似代替 | TO-263-3 |
Trans MOSFET P-CH 60V 47A 3Pin(2+Tab) D2PAK T/R
|
||
FQB47P06TM_AM002
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
|
||
FQB47P06TM_AM002
|
ON Semiconductor | 功能相似 | TO-263 |
FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
|
||
IRF5210STRRPBF
|
Infineon | 功能相似 | TO-263-3 |
Trans MOSFET P-CH 100V 38A 3Pin(2+Tab) D2PAK T/R
|
||
IRF5210STRRPBF
|
International Rectifier | 功能相似 | TO-263-3 |
Trans MOSFET P-CH 100V 38A 3Pin(2+Tab) D2PAK T/R
|
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