Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 26 mΩ |
|
Technical parameters/polarity: | P-CH |
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Technical parameters/dissipated power: | 3.75 W |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | 60 V |
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Technical parameters/Continuous drain current (Ids): | 47A |
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Technical parameters/rise time: | 450 ns |
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Technical parameters/descent time: | 195 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 9.65 mm |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB47P06TM_AM002
|
Fairchild | 类似代替 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
|
||
FQB47P06TM_AM002
|
ON Semiconductor | 类似代替 | TO-263 |
FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
|
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