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Model IRF5210SPBF

Description 场效应管, MOSFET, P沟道, -100V, 40A D2-PAK

Brand: International Rectifier

Packaging TO-263-3

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.06 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	3.1 W
Technical parameters/product series:	IRF5210S
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Leakage source breakdown voltage:	-100 V
Technical parameters/Continuous drain current (Ids):	-40.0 A
Technical parameters/Input capacitance (Ciss):	2780pF @25V(Vds)
Technical parameters/rated power (Max):	3.1 W
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Length:	10.67 mm
Dimensions/Height:	4.83 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Rail, Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Customs information/ECCN code:	EAR99

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