Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -34.0 A
Technical parameters/number of pins: 2
Technical parameters/drain source resistance: 0.049 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.75 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): 33.5 mA
Technical parameters/rise time: 250 ns
Technical parameters/Input capacitance (Ciss): 2910pF @25V(Vds)
Technical parameters/rated power (Max): 3.75 W
Technical parameters/descent time: 210 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.75W (Ta), 155W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB34P10TM_F085
|
Fairchild | 功能相似 | TO-263-3 |
P 通道 MOSFET，Fairchild Semiconductor Fairchild Semiconductor 提供的解决方案可解决汽车市场的复杂难题，具有严谨的质量控制、安全和可靠性标准。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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||
FQB34P10TM_F085
|
ON Semiconductor | 功能相似 | D2PAK-263 |
P 通道 MOSFET，Fairchild Semiconductor Fairchild Semiconductor 提供的解决方案可解决汽车市场的复杂难题，具有严谨的质量控制、安全和可靠性标准。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
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IRF5210SPBF
|
International Rectifier | 功能相似 | TO-263-3 |
场效应管, MOSFET, P沟道, -100V, 40A D2-PAK
|
||
IRF5210SPBF
|
Infineon | 功能相似 | TO-263-3 |
场效应管, MOSFET, P沟道, -100V, 40A D2-PAK
|
||
IRF5210STRLPBF
|
Infineon | 功能相似 | TO-263-3 |
P沟道,-100V,-38A,60mΩ@10V
|
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