Technical parameters/dissipated power: 3.75 W
Technical parameters/rise time: 250 ns
Technical parameters/Input capacitance (Ciss): 2240pF @25V(Vds)
Technical parameters/descent time: 210 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3750 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK-263
External dimensions/packaging: D2PAK-263
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Train
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB34P10TM
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR FQB34P10TM 晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review