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Model HUF75344G3

Description UltraFET® MOSFET，Fairchild Semiconductor UItraFET® Trench MOSFET Combining the characteristics of achieving benchmark efficiency in power conversion applications. This device can withstand high energy in avalanche mode, and the diode exhibits very short reverse recovery time and accumulated charge. Optimized for high frequency efficiency, minimum RDS (on), low ESR, low total gate charge, and Miller gate charge. Applications: High frequency DC-DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage（

Brand: ON Semiconductor

Packaging TO-247-3

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

5+:

$ 21.5350

50+:

$ 20.6147

200+:

$ 20.0994

500+:

$ 19.9705

1000+:

$ 19.8417

2500+:

$ 19.6944

5000+:

$ 19.6024

7500+:

$ 19.5104

Price	$ 21.5350	$ 20.6147	$ 20.0994	$ 19.9705	$ 19.8417
Start batch production	5+	50+	200+	500+	1000+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(7793) Minimum order quantity(5)

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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.0065 Ω

Technical parameters/dissipated power: 285 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/rise time: 125 ns

Technical parameters/Input capacitance (Ciss): 3200pF @25V(Vds)

Technical parameters/rated power (Max): 285 W

Technical parameters/descent time: 57 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 285 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 15.87 mm

External dimensions/width: 4.82 mm

External dimensions/height: 20.82 mm

External dimensions/packaging: TO-247-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Other/Manufacturing Applications: power management

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
HUF75339G3	Harris	类似代替	TO-247	75A ， 55V ， 0.012 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs	PDF
HUF75339G3	Fairchild	类似代替	TO-247-3	75A ， 55V ， 0.012 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs	PDF
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HUF75343G3	Fairchild	类似代替	TO-247-3	75A ， 55V ， 0.009 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs	PDF
HUF75343G3	TI	类似代替		75A ， 55V ， 0.009 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
HUF75345G3	ON Semiconductor	功能相似	TO-247-3	75A ， 55V ， 0.007 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs	PDF
IRFP054NPBF	Infineon	功能相似	TO-247-3	N 通道功率 MOSFET 80A 至 99A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。	PDF
IRFP064	Vishay Siliconix	功能相似	TO-247-3	MOSFET N-CH 60V 70A TO-247AC	PDF
IRFP064	Vishay Semiconductor	功能相似	TO-247	MOSFET N-CH 60V 70A TO-247AC	PDF
IRFP064	IRF	功能相似		MOSFET N-CH 60V 70A TO-247AC	PDF
IRFP064	VISHAY	功能相似	TO-247	MOSFET N-CH 60V 70A TO-247AC	PDF
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