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Model HUF75339G3
Description Power Field-Effect Transistor, 70A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
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Brand: Harris
Packaging TO-247
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8737) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 55.0 V

Technical parameters/rated current: 75.0 A

Technical parameters/drain source resistance: 12.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 200 W

Technical parameters/drain source voltage (Vds): 55.0 V

Technical parameters/leakage source breakdown voltage: 55.0 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 75.0 A

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-247

External dimensions/packaging: TO-247

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HUF75339G3 HUF75339G3 Harris 功能相似 TO-247
75A ， 55V ， 0.012 Ohm的N通道UltraFET功率MOSFET 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
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HUF75339G3 HUF75339G3 Fairchild 功能相似 TO-247-3
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HUF75343G3 HUF75343G3 ON Semiconductor 功能相似 TO-247-3
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HUF75343G3 HUF75343G3 Intersil 功能相似
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HUF75343G3 HUF75343G3 Fairchild 功能相似 TO-247-3
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HUF75343G3 HUF75343G3 TI 功能相似
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HUF75344G3 HUF75344G3 Fairchild 类似代替 TO-247-3
FAIRCHILD SEMICONDUCTOR HUF75344G3. 场效应管, MOSFET, N沟道
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HUF75344G3 HUF75344G3 Intersil 类似代替
FAIRCHILD SEMICONDUCTOR HUF75344G3. 场效应管, MOSFET, N沟道
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HUF75344G3 HUF75344G3 ON Semiconductor 类似代替 TO-247-3
FAIRCHILD SEMICONDUCTOR HUF75344G3. 场效应管, MOSFET, N沟道
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HUF75345G3 HUF75345G3 ON Semiconductor 功能相似 TO-247-3
FAIRCHILD SEMICONDUCTOR HUF75345G3 晶体管, MOSFET, 通用, N沟道, 75 A, 55 V, 7 mohm, 10 V, 4 V
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