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Description UltraFET® MOSFET,Fairchild Semiconductor UItraFET® Trench MOSFET Combining the characteristics of achieving benchmark efficiency in power conversion applications. This device can withstand high energy in avalanche mode, and the diode exhibits very short reverse recovery time and accumulated charge. Optimized for high frequency efficiency, minimum RDS (on), low ESR, low total gate charge, and Miller gate charge. Applications: High frequency DC-DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage(
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Packaging TO-247-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
28.93  yuan 28.93yuan
5+:
$ 33.8469
50+:
$ 32.4005
200+:
$ 31.5905
500+:
$ 31.3880
1000+:
$ 31.1855
2500+:
$ 30.9540
5000+:
$ 30.8094
7500+:
$ 30.6647
Quantity
5+
50+
200+
500+
1000+
Price
$33.8469
$32.4005
$31.5905
$31.3880
$31.1855
Price $ 33.8469 $ 32.4005 $ 31.5905 $ 31.3880 $ 31.1855
Start batch production 5+ 50+ 200+ 500+ 1000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6468) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.007 Ω

Technical parameters/dissipated power: 325 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/rise time: 118 ns

Technical parameters/Input capacitance (Ciss): 4000pF @25V(Vds)

Technical parameters/rated power (Max): 325 W

Technical parameters/descent time: 26 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 325 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 15.87 mm

External dimensions/width: 4.82 mm

External dimensions/height: 20.82 mm

External dimensions/packaging: TO-247-3

Physical parameters/materials: Silicon

Other/Product Lifecycle: Active

Other/Packaging Methods: Rail, Tube

Other/Manufacturing Applications: Power management, portable equipment, motor drive and control

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

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UltraFET® MOSFET,Fairchild Semiconductor UItraFET® Trench MOSFET 组合了在功率转换应用中实现基准效率的特性。 该设备可耐受雪崩模式中的高能量,且二极管展现出非常短的反向恢复时间和积累电荷。 为高频率时的效率、最低 RDS(接通)、低 ESR 和低总栅极电荷和 Miller 栅极电荷进行了优化。 应用:高频直流-直流转换器、开关调节器、电动机驱动器、低电压总线开关和电源管理。 ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (<250V) 类型。 先进的硅技术提供更小的芯片尺寸,其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
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