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Specification parameters
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Technical parameters/rated power:

130 W

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.012 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

130 W

Technical parameters/threshold voltage:

4 V

Technical parameters/Input capacitance:

2900 pF

Technical parameters/drain source voltage (Vds):

55 V

Technical parameters/Leakage source breakdown voltage:

55 V

Technical parameters/Continuous drain current (Ids):

81A

Technical parameters/rise time:

66 ns

Technical parameters/Input capacitance (Ciss):

2900pF @25V(Vds)

Technical parameters/rated power (Max):

170 W

Technical parameters/descent time:

46 ns

Technical parameters/operating temperature (Max):

175 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

170W (Tc)

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-247-3

Dimensions/Length:

15.9 mm

Dimensions/Width:

5.3 mm

Dimensions/Height:

20.3 mm

Dimensions/Packaging:

TO-247-3

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Other/Manufacturing Applications:

Industrial, Power Management, Power Management, Industrial

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRFP054N	Infineon	类似代替	TO-247-3	TO-247AC N-CH 55V 81A	PDF
IRFP054N	International Rectifier	类似代替		TO-247AC N-CH 55V 81A	PDF
IRFP064NPBF	International Rectifier	类似代替	TO-247-3	INFINEON IRFP064NPBF 晶体管, MOSFET, N沟道, 98 A, 55 V, 8 mohm, 10 V, 4 V	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643