Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 72.0 A
Technical parameters/drain source resistance: 12.0 mΩ (max)
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 170W (Tc)
Technical parameters/product series: IRFP054N
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55.0V (min)
Technical parameters/Continuous drain current (Ids): 81.0 A
Technical parameters/rise time: 66 ns
Technical parameters/Input capacitance (Ciss): 2900pF @25V(Vds)
Technical parameters/descent time: 46 ns
Technical parameters/dissipated power (Max): 170W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF75344G3
|
Fairchild | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HUF75344G3. 场效应管, MOSFET, N沟道
|
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HUF75344G3
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR HUF75344G3. 场效应管, MOSFET, N沟道
|
|||
HUF75344G3
|
ON Semiconductor | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HUF75344G3. 场效应管, MOSFET, N沟道
|
||
HUF75345G3
|
ON Semiconductor | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR HUF75345G3 晶体管, MOSFET, 通用, N沟道, 75 A, 55 V, 7 mohm, 10 V, 4 V
|
||
IRFP054NPBF
|
Infineon | 类似代替 | TO-247-3 |
N 通道功率 MOSFET 80A 至 99A,Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备,外形可应对几乎任何板布局和热设计挑战。 在整个范围内,基准导通电阻减少了传导损耗,让设计人员可以提供最佳系统效率。
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