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Model BSS84PH6433XTMA1
Description Infineon SIPMOS® P Channel MOSFET * * Infineon * * SIPMOS ® Small signal P-channel MOSFETs have multiple functions, including enhancement mode, continuous drain current (as low as 80A), and a wide operating temperature range. SIPMOS power transistors can be used for various applications, including telecommunications eMobility、 Laptops, DC/DC devices, and the automotive industry. ·Compliant with AEC Q101 standard (please refer to the data sheet) · Lead free electroplating, RoHS compliant # # MOSFET transistor, Infineon Infineon's extensive and comprehensive MOSFET equipment portfolio including OptiMOS ™ With CoolMOS ™ Series. These products offer top-notch performance in the latest generation of state-of-the-art power MOSFETs
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Brand: Infineon
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.63  yuan 0.63yuan
10+:
$ 0.8559
50+:
$ 0.8115
100+:
$ 0.7798
300+:
$ 0.7608
500+:
$ 0.7418
1000+:
$ 0.7228
2500+:
$ 0.6942
5000+:
$ 0.6879
Quantity
10+
50+
100+
300+
500+
Price
$0.8559
$0.8115
$0.7798
$0.7608
$0.7418
Price $ 0.8559 $ 0.8115 $ 0.7798 $ 0.7608 $ 0.7418
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6153) Minimum order quantity(10)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 5.8 Ω

Technical parameters/polarity: P-CH

Technical parameters/dissipated power: 360 mW

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Continuous drain current (Ids): 0.17A

Technical parameters/rise time: 16.2 ns

Technical parameters/Input capacitance (Ciss): 19pF @25V(Vds)

Technical parameters/rated power (Max): 360 mW

Technical parameters/descent time: 20.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 360mW (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/length: 2.9 mm

External dimensions/width: 1.3 mm

External dimensions/height: 1 mm

External dimensions/packaging: SOT-23-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSS84PH6327XTSA2 BSS84PH6327XTSA2 Infineon 类似代替 SOT-23-3
INFINEON BSS84PH6327XTSA2 晶体管, MOSFET, P沟道, -170 mA, -60 V, 5.8 ohm, -10 V, -1.5 V
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