Technical parameters/dissipated power: 40W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Input capacitance (Ciss): 230pF @25V(Vds)
Technical parameters/dissipated power (Max): 40W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK214
|
Renesas Electronics | 功能相似 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK214
|
HITACHI | 功能相似 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
FDD6N20TM
|
ON Semiconductor | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD6N20TM 晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
|
||
FDD6N20TM
|
Fairchild | 类似代替 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD6N20TM 晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
|
||
PHD9NQ20T,118
|
NXP | 功能相似 | TO-252-3 |
N沟道 VDS=200V VGS=±30V ID=8.7A P=88W
|
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