Technical parameters/rated voltage (DC): 160 V
Technical parameters/rated current: 500 mA
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 160 V
Technical parameters/Continuous drain current (Ids): 500 mA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK213
|
Renesas Electronics | 功能相似 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK213-E
|
Renesas Electronics | 类似代替 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK214
|
Renesas Electronics | 功能相似 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK214
|
HITACHI | 功能相似 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
|
|
Renesas Electronics | 类似代替 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
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