Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Continuous drain current (Ids): | 0.5A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Other/Product Lifecycle: | Unknown |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK213-E
|
Renesas Electronics | 类似代替 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK214
|
Renesas Electronics | 类似代替 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK214
|
HITACHI | 类似代替 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
PHD9NQ20T,118
|
NXP | 功能相似 | TO-252-3 |
N沟道 VDS=200V VGS=±30V ID=8.7A P=88W
|
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