Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 140 V
Technical parameters/Continuous drain current (Ids): 0.5A
Technical parameters/Input capacitance (Ciss): 90pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -45 ℃
Technical parameters/dissipated power (Max): 1750 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK213
|
Renesas Electronics | 功能相似 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK214
|
Renesas Electronics | 类似代替 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK214
|
HITACHI | 类似代替 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
|
|
Renesas Electronics | 类似代替 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review