Technical parameters/number of channels: | 1 |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 88 W |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Continuous drain current (Ids): | 8.7A |
|
Technical parameters/rise time: | 19 ns |
|
Technical parameters/Input capacitance (Ciss): | 959pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 88 W |
|
Technical parameters/descent time: | 15 ns |
|
Technical parameters/dissipated power (Max): | 88W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Width: | 6.22 mm |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK214
|
Renesas Electronics | 功能相似 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
2SK214
|
HITACHI | 功能相似 | TO-220 |
硅N沟道MOS FET Silicon N Channel MOS FET
|
||
FDD6N20TM
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD6N20TM 晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
|
||
FDD6N20TM
|
Fairchild | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR FDD6N20TM 晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V
|
||
PHD9NQ20T,118
|
NXP | 功能相似 | TO-252-3 |
N沟道 VDS=200V VGS=±30V ID=8.7A P=88W
|
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