Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.6 Ω |
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Technical parameters/dissipated power: | 40 W |
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Technical parameters/threshold voltage: | 5 V |
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Technical parameters/drain source voltage (Vds): | 200 V |
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Technical parameters/rise time: | 5.6 ns |
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Technical parameters/Input capacitance (Ciss): | 170pF @25V(Vds) |
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Technical parameters/rated power (Max): | 40 W |
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Technical parameters/descent time: | 12.8 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 40000 mW |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Consumer electronics, power management, lighting |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2887
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ROHM Semiconductor | 功能相似 |
开关（ 200V ， 3A ） Switching (200V, 3A)
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2SK2887
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Kexin | 功能相似 |
开关（ 200V ， 3A ） Switching (200V, 3A)
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FDD6N20TF
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ON Semiconductor | 类似代替 | TO-252-3 |
N沟道MOSFET N-Channel MOSFET
|
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FDD6N20TF
|
Fairchild | 类似代替 | TO-252-3 |
N沟道MOSFET N-Channel MOSFET
|
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|
|
ON Semiconductor | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 200V 5.3A 3Pin(2+Tab) DPAK T/R
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Renesas Electronics | 功能相似 |
硅N沟道MOS FET高速电源开关 Silicon N Channel MOS FET High Speed Power Switching
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