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Model FDD6N20TM

Description FAIRCHILD SEMICONDUCTOR FDD6N20TM 晶体管, MOSFET, N沟道, 4.5 A, 200 V, 0.6 ohm, 10 V, 5 V

Brand: Fairchild

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.6 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	40 W
Technical parameters/threshold voltage:	5 V
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/Continuous drain current (Ids):	4.5A
Technical parameters/rise time:	5.6 ns
Technical parameters/Input capacitance (Ciss):	230pF @25V(Vds)
Technical parameters/rated power (Max):	40 W
Technical parameters/descent time:	12.8 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	40W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

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