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Model HAT2279H-EL-E
Description Silicon N Channel Power MOS FET Power Switching
Product QR code
Brand: Renesas Electronics
Packaging SOT-669
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
3.28  yuan 3.28yuan
5+:
$ 4.4307
25+:
$ 4.1025
50+:
$ 3.8728
100+:
$ 3.7743
500+:
$ 3.7087
2500+:
$ 3.6266
5000+:
$ 3.5938
10000+:
$ 3.5446
Quantity
5+
25+
50+
100+
500+
Price
$4.4307
$4.1025
$3.8728
$3.7743
$3.7087
Price $ 4.4307 $ 4.1025 $ 3.8728 $ 3.7743 $ 3.7087
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8764) Minimum order quantity(5)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 25 W

Technical parameters/drain source voltage (Vds): 80 V

Technical parameters/Continuous drain current (Ids): 30A

Technical parameters/rise time: 14.5 ns

Technical parameters/Input capacitance (Ciss): 3520pF @10V(Vds)

Technical parameters/rated power (Max): 25 W

Technical parameters/descent time: 9.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 25W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: SOT-669

External dimensions/packaging: SOT-669

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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