Technical parameters/drain source resistance: | 0.015 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 89 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 80 V |
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Technical parameters/Continuous drain current (Ids): | 45A |
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Technical parameters/Input capacitance (Ciss): | 1640pF @40V(Vds) |
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Technical parameters/rated power (Max): | 89 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/dissipated power (Max): | 89W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-669 |
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Dimensions/Packaging: | SOT-669 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HAT2279H-EL-E
|
Renesas Electronics | 功能相似 | SOT-669 |
硅N通道功率MOS FET电源开关 Silicon N Channel Power MOS FET Power Switching
|
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