Technical parameters/dissipated power: 89 W
Technical parameters/input capacitance: 1640 pF
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1640pF @40V(Vds)
Technical parameters/rated power (Max): 89 W
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: SOT-669
External dimensions/length: 5 mm
External dimensions/width: 4.1 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SOT-669
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HAT2279H-EL-E
|
Renesas Electronics | 功能相似 | SOT-669 |
硅N通道功率MOS FET电源开关 Silicon N Channel Power MOS FET Power Switching
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review