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Model PSMN8R2-80YS,115

Description Nexperia Si N沟道 MOSFET PSMN8R2-80YS,115, 82 A, Vds=80 V, 4引脚 SOT-669封装

Brand: Nexperia

Packaging SOT-669

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	4
Technical parameters/drain source resistance:	0.0058 Ω
Technical parameters/dissipated power:	130 W
Technical parameters/threshold voltage:	3 V
Technical parameters/Input capacitance:	3640 pF
Technical parameters/drain source voltage (Vds):	80 V
Technical parameters/rise time:	22 ns
Technical parameters/Input capacitance (Ciss):	3640pF @40V(Vds)
Technical parameters/rated power (Max):	130 W
Technical parameters/descent time:	16 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	130W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	SOT-669
Dimensions/Length:	5 mm
Dimensions/Width:	4.1 mm
Dimensions/Height:	1.1 mm
Dimensions/Packaging:	SOT-669
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Communication and networking, industry, power management, consumer electronics, motor drive and control
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	lead-free