Technical parameters/drain source resistance: 0.0058 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 130 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/Continuous drain current (Ids): 82.0 A
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 3640pF @40V(Vds)
Technical parameters/rated power (Max): 130 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 130W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-669
External dimensions/height: 1.1 mm
External dimensions/packaging: SOT-669
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HAT2279H-EL-E
|
Renesas Electronics | 功能相似 | SOT-669 |
硅N通道功率MOS FET电源开关 Silicon N Channel Power MOS FET Power Switching
|
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