Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.23 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 34 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/rise time: 26 ns
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Computers & Computer Peripherals, Portable Devices, Alternative Energy, Industrial, Motor Drive & Control, Lighting, Communications & Networking, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCPF260N60E
|
Fairchild | 功能相似 | TO-220F-3 |
FAIRCHILD SEMICONDUCTOR FCPF260N60E 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
|
||
IPA60R280E6XKSA1
|
Infineon | 功能相似 | TO-220-3 |
晶体管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V
|
||
IPA60R280P6XKSA1
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IPA60R280P6XKSA1 功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
|
||
SIHF15N60E-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
VISHAY SIHF15N60E-E3 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
|
||
SPA16N50C3XKSA1
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPA16N50C3XKSA1 晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
|
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