Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.22 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 36 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 15A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 2500pF @25V(Vds)
Technical parameters/rated power (Max): 36 W
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 36W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220F-3
External dimensions/length: 10.36 mm
External dimensions/width: 16.07 mm
External dimensions/height: 16.07 mm
External dimensions/packaging: TO-220F-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF15N60E-GE3
|
Vishay Semiconductor | 功能相似 | TO-220 |
VISHAY SIHF15N60E-GE3 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
|
||
SIHF15N60E-GE3
|
VISHAY | 功能相似 | TO-220-3 |
VISHAY SIHF15N60E-GE3 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
|
||
SPA15N60C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPA15N60C3 功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.25 ohm, 10 V, 3 V
|
||
SPA16N50C3XKSA1
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPA16N50C3XKSA1 晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
|
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