Technical parameters/rated voltage (DC): 560 V
Technical parameters/rated current: 16.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 160 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 560 V
Technical parameters/Continuous drain current (Ids): 16.0 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 34 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.65 mm
External dimensions/width: 4.85 mm
External dimensions/height: 16.15 mm
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Consumer Electronics, Power Management, Communication&Networking, Power Management, Consumer Electronics
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FCPF260N60E
|
Fairchild | 功能相似 | TO-220F-3 |
FAIRCHILD SEMICONDUCTOR FCPF260N60E 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V
|
||
SIHF15N60E-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
VISHAY SIHF15N60E-E3 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
|
||
SIHF15N60E-GE3
|
Vishay Semiconductor | 功能相似 | TO-220 |
VISHAY SIHF15N60E-GE3 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
|
||
SIHF15N60E-GE3
|
VISHAY | 功能相似 | TO-220-3 |
VISHAY SIHF15N60E-GE3 功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
|
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