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Description MOSFET N-CH 600V 15A TO220 FULLP
Product QR code
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
13.3  yuan 13.3yuan
5+:
$ 15.5645
50+:
$ 14.8994
200+:
$ 14.5269
500+:
$ 14.4338
1000+:
$ 14.3406
2500+:
$ 14.2342
5000+:
$ 14.1677
7500+:
$ 14.1012
Quantity
5+
50+
200+
500+
1000+
Price
$15.5645
$14.8994
$14.5269
$14.4338
$14.3406
Price $ 15.5645 $ 14.8994 $ 14.5269 $ 14.4338 $ 14.3406
Start batch production 5+ 50+ 200+ 500+ 1000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(3352) Minimum order quantity(5)
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Technical parameters/drain source resistance: 0.23 Ω

Technical parameters/dissipated power: 180 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/rise time: 51 nS

Technical parameters/Input capacitance (Ciss): 1350pF @100V(Vds)

Technical parameters/descent time: 33 nS

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 34W (Tc)

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIHF15N60E-GE3 SIHF15N60E-GE3 Vishay Semiconductor 类似代替 TO-220
MOSFET N-CH 600V 15A TO220 FULLP
PDF
SIHF15N60E-GE3 SIHF15N60E-GE3 VISHAY 类似代替 TO-220-3
MOSFET N-CH 600V 15A TO220 FULLP
PDF
SPA15N60C3 SPA15N60C3 Infineon 功能相似 TO-220-3
INFINEON SPA15N60C3 功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.25 ohm, 10 V, 3 V
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