Technical parameters/drain source resistance: 0.23 Ω
Technical parameters/dissipated power: 180 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/rise time: 51 nS
Technical parameters/Input capacitance (Ciss): 1350pF @100V(Vds)
Technical parameters/descent time: 33 nS
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 34W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF15N60E-GE3
|
Vishay Semiconductor | 类似代替 | TO-220 |
MOSFET N-CH 600V 15A TO220 FULLP
|
||
SIHF15N60E-GE3
|
VISHAY | 类似代替 | TO-220-3 |
MOSFET N-CH 600V 15A TO220 FULLP
|
||
SPA15N60C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPA15N60C3 功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.25 ohm, 10 V, 3 V
|
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