Technical parameters/rated power: 32 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.25 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 32 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 13.8A
Technical parameters/rise time: 9 ns
Technical parameters/Input capacitance (Ciss): 950pF @100V(Vds)
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 32W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF15N60E-GE3
|
Vishay Semiconductor | 功能相似 | TO-220 |
晶体管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
|
||
SIHF15N60E-GE3
|
VISHAY | 功能相似 | TO-220-3 |
晶体管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
|
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