Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 30A
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6766
|
Infineon | 功能相似 | TO-204 |
Trans MOSFET N-CH 200V 30A 3Pin(2+Tab) TO-3
|
||
2N6766
|
IXYS Semiconductor | 功能相似 |
Trans MOSFET N-CH 200V 30A 3Pin(2+Tab) TO-3
|
|||
2N6766
|
Semelab | 功能相似 |
Trans MOSFET N-CH 200V 30A 3Pin(2+Tab) TO-3
|
|||
2N6766
|
International Rectifier | 功能相似 | TO-204 |
Trans MOSFET N-CH 200V 30A 3Pin(2+Tab) TO-3
|
||
2N6766
|
Harris | 功能相似 |
Trans MOSFET N-CH 200V 30A 3Pin(2+Tab) TO-3
|
|||
2N6766
|
Microsemi | 功能相似 | TO-204 |
Trans MOSFET N-CH 200V 30A 3Pin(2+Tab) TO-3
|
||
|
|
Harris | 功能相似 |
INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
|
|||
IRF250
|
International Rectifier | 功能相似 | TO-3 |
INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
|
||
IRF250
|
NJS | 功能相似 |
INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
|
|||
IRF250
|
Semelab | 功能相似 | TO-204 |
INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
|
||
JANTX2N6766
|
Microsemi | 功能相似 | TO-3 |
每N沟道MOSFET合格MIL -PRF-五百四十三分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
|
||
JANTX2N6766
|
International Rectifier | 功能相似 | TO-3 |
每N沟道MOSFET合格MIL -PRF-五百四十三分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
|
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