Technical parameters/Input capacitance (Ciss): 3500pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Other/Product Lifecycle: Not Recommended
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Harris | 类似代替 |
INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
|
|||
IRF250
|
International Rectifier | 类似代替 | TO-3 |
INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
|
||
IRF250
|
NJS | 类似代替 |
INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
|
|||
IRF250
|
Semelab | 类似代替 | TO-204 |
INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
|
||
IRF251
|
IXYS Semiconductor | 功能相似 |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
|
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