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Model IRF250

Description INTERNATIONAL RECTIFIER IRF250 场效应管, N 通道, MOSFET, 200V, 30A, TO-204AE 新

Brand: International Rectifier

Packaging TO-3

Delivery time

Packaging method

Standard packaging quantity 1

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Technical parameters/rated power:	150 W
Technical parameters/number of pins:	2
Technical parameters/drain source resistance:	85 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	150 W
Technical parameters/product series:	IRF250
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	200 V
Technical parameters/Leakage source breakdown voltage:	200 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	30.0 A
Technical parameters/Input capacitance (Ciss):	3500pF @25V(Vds)
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	150000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	2
Encapsulation parameters/Encapsulation:	TO-3
Dimensions/Height:	7.74 mm
Dimensions/Packaging:	TO-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Unknown
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2014/12/17
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRF250	Harris	类似代替		INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
IRF250	International Rectifier	类似代替	TO-3	INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V	PDF
IRF250	NJS	类似代替		INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V	PDF
IRF250	Semelab	类似代替	TO-204	INFINEON IRF250 晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V	PDF
IRF251	IXYS Semiconductor	功能相似		High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series	PDF