Technical parameters/number of channels: | 1 |
|
Technical parameters/dissipated power: | 4 W |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 4W (Ta), 150W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6766E3
|
Microsemi | 功能相似 |
N-CH 200V 30A
|
|||
IRF251
|
IXYS Semiconductor | 功能相似 |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
|
|||
IXFM50N20
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
TO-204AE N-CH 200V 50A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review