Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 50.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 45 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 50.0 A
Technical parameters/rise time: 15 ns
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 39.12 mm
External dimensions/width: 26.66 mm
External dimensions/height: 11.4 mm
External dimensions/packaging: TO-3-3
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF240
|
Fairchild | 功能相似 |
Trans MOSFET N-CH 200V 18A 3Pin(2+Tab) TO-3
|
|||
JANTX2N6766
|
Microsemi | 功能相似 | TO-3 |
Trans MOSFET N-CH 200V 30A 3Pin(2+Tab) TO-3
|
||
JANTX2N6766
|
International Rectifier | 功能相似 | TO-3 |
Trans MOSFET N-CH 200V 30A 3Pin(2+Tab) TO-3
|
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