Technical parameters/dissipated power: 150 W
Technical parameters/product series: IRF250
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Customs information/ECCN code: EAR99
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6766E3
|
Microsemi | 功能相似 |
N-CH 200V 30A
|
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IRF251
|
IXYS Semiconductor | 功能相似 |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series
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IXFM50N20
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IXYS Semiconductor | 功能相似 | TO-3-3 |
TO-204AE N-CH 200V 50A
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