Technical parameters/drain source resistance: 0.016 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 4.4 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ4431EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4431EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4431EY-T1_GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET P-CH 30V 10.8A 8SOIC
|
||
SQ4431EY-T1_GE3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET P-CH 30V 10.8A 8SOIC
|
||
SQ4470EY-T1_GE3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4470EY-T1_GE3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4470EY-T1_GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 60V 16A 8SOIC
|
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