Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.01 Ω
Technical parameters/dissipated power: 7.1 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/rise time: 12 ns
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ4431EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4431EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4470EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4470EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4942EY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
||
SQ4942EY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
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