Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.01 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 7.1 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ4431EY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4431EY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4431EY-T1_GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET P-CH 30V 10.8A 8SOIC
|
||
SQ4431EY-T1_GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET P-CH 30V 10.8A 8SOIC
|
||
SQ4942EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
||
SQ4942EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review