Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.02 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 6 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/width: 3.9 mm
External dimensions/packaging: SOIC-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ4431EY-T1_GE3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET P-CH 30V 10.8A 8SOIC
|
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SQ4431EY-T1_GE3
|
VISHAY | 完全替代 | SOIC-8 |
MOSFET P-CH 30V 10.8A 8SOIC
|
||
SQ4470EY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N-CH 60V 16A 8SOIC
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SQ4470EY-T1-GE3
|
Vishay Siliconix | 类似代替 | SOIC |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4942EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
||
SQ4942EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
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