Technical parameters/drain source resistance: | 12 mΩ |
|
Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 16A |
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Technical parameters/rise time: | 12 ns |
|
Technical parameters/Input capacitance (Ciss): | 2531pF @25V(Vds) |
|
Technical parameters/descent time: | 9 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 7100 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Minimum Packaging: | 2500 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ4431EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4431EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4470EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4470EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4942EY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
||
SQ4942EY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
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