Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 7.1W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 3165pF @25V(Vds)
Technical parameters/dissipated power (Max): 7.1W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ4431EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC-8 |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4431EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC |
MOSFET Transistor, P Channel, -10.8A, -30V, 0.02Ω, -10V, -1.5V
|
||
SQ4470EY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4470EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SOIC |
MOSFET N-CH 60V 16A 8SOIC
|
||
SQ4942EY-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
||
SQ4942EY-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET,NN CH,W DIODE,40V,8A,SO8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review