Technical parameters/number of pins: 2
Technical parameters/drain source resistance: 0.055 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/product series: IRF150
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 38.0 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6764
|
International Rectifier | 功能相似 |
INFINEON 2N6764 MOSFET Transistor, N Channel, 38A, 100V, 55mohm, 10V, 4V
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2N6764
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TT Electronics Resistors | 功能相似 |
INFINEON 2N6764 MOSFET Transistor, N Channel, 38A, 100V, 55mohm, 10V, 4V
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2N6764
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Infineon | 功能相似 | TO-204 |
INFINEON 2N6764 MOSFET Transistor, N Channel, 38A, 100V, 55mohm, 10V, 4V
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IRF150
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Fairchild | 功能相似 | BFM |
Trans MOSFET N-CH 100V 38A 3Pin(2+Tab) TO-3
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IRF150
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IXYS Semiconductor | 功能相似 |
Trans MOSFET N-CH 100V 38A 3Pin(2+Tab) TO-3
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IRF150
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Intersil | 功能相似 |
Trans MOSFET N-CH 100V 38A 3Pin(2+Tab) TO-3
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IRF150
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International Rectifier | 功能相似 | TO-3 |
Trans MOSFET N-CH 100V 38A 3Pin(2+Tab) TO-3
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Harris | 功能相似 |
每N沟道MOSFET合格MIL -PRF-五百四十三分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
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JANTX2N6764
|
Microsemi | 功能相似 | TO-3 |
每N沟道MOSFET合格MIL -PRF-五百四十三分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
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JANTX2N6764
|
International Rectifier | 功能相似 | TO-3 |
每N沟道MOSFET合格MIL -PRF-五百四十三分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
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JANTXV2N6764
|
International Rectifier | 功能相似 |
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
|
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NTE2392
|
NTE Electronics | 功能相似 | TO-3 |
TO-3 N-CH 100V 40A
|
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