Technical parameters/dissipated power: | 4 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 4W (Ta), 150W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6764
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,
|
|||
2N6764
|
TT Electronics Resistors | 功能相似 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,
|
|||
2N6764
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,
|
||
|
|
Microsemi | 功能相似 |
N-CH 100V 38A
|
|||
IRF150
|
Fairchild | 功能相似 | BFM |
HIGH VOLTAGE POWER MOSFET DIE
|
||
IRF150
|
IXYS Semiconductor | 功能相似 |
HIGH VOLTAGE POWER MOSFET DIE
|
|||
IRF150
|
Intersil | 功能相似 |
HIGH VOLTAGE POWER MOSFET DIE
|
|||
IRF150
|
International Rectifier | 功能相似 | TO-3 |
HIGH VOLTAGE POWER MOSFET DIE
|
||
IRF151
|
Fairchild | 功能相似 |
N沟道功率MOSFET , 40 A, 60 V / 100 V N-Channel Power MOSFETs, 40 A, 60 V/100 V
|
|||
IRF151
|
Samsung | 功能相似 |
N沟道功率MOSFET , 40 A, 60 V / 100 V N-Channel Power MOSFETs, 40 A, 60 V/100 V
|
|||
IRF151
|
IXYS Semiconductor | 功能相似 |
N沟道功率MOSFET , 40 A, 60 V / 100 V N-Channel Power MOSFETs, 40 A, 60 V/100 V
|
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