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Model IRF151
Description N-CHANNEL POWER MOSFETS
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Brand: Samsung
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8705) Minimum order quantity(1)
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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N6764 2N6764 International Rectifier 功能相似
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
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2N6764 2N6764 TT Electronics Resistors 功能相似
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
PDF
2N6764 2N6764 Infineon 功能相似 TO-204
Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
PDF
IRF150PBF IRF150PBF Infineon 功能相似 TO-3
TO-3 N-CH 100V 38A
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