Technical parameters/drain source resistance: 0.055 Ω
Technical parameters/dissipated power: 150 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 3700pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150000 mW
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF150
|
Fairchild | 功能相似 | BFM |
40A , 100V , 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
||
IRF150
|
IXYS Semiconductor | 功能相似 |
40A , 100V , 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
|||
IRF150
|
Intersil | 功能相似 |
40A , 100V , 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
|||
IRF150
|
International Rectifier | 功能相似 | TO-3 |
40A , 100V , 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
||
NTE2392
|
NTE Electronics | 类似代替 | TO-3 |
TO-3 N-CH 100V 40A
|
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