Technical parameters/drain source resistance: 0.055 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100V (min)
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
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International Rectifier | 类似代替 |
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
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