Technical parameters/drain source resistance: 55.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/product series: IRF150
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 38.0 A
Package parameters/number of pins: 2
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF150
|
Fairchild | 功能相似 | BFM |
40A , 100V , 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
||
IRF150
|
IXYS Semiconductor | 功能相似 |
40A , 100V , 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
|||
IRF150
|
Intersil | 功能相似 |
40A , 100V , 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
|||
IRF150
|
International Rectifier | 功能相似 | TO-3 |
40A , 100V , 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
||
NTE2392
|
NTE Electronics | 类似代替 | TO-3 |
TO-3 N-CH 100V 40A
|
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