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Model J174
Description JFET P-CH 30V 0.35W TO92
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Brand: ON Semiconductor
Packaging TO-226-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8138) Minimum order quantity(1)
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Technical parameters/drain source resistance: 85 Ω

Technical parameters/dissipated power: 350 mW

Technical parameters/breakdown voltage: 30 V

Technical parameters/rated power (Max): 350 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 350 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/packaging: TO-226-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
J174 J174 VISHAY 功能相似 TO-92
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J174 J174 InterFET 功能相似 TO-92-3
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J174 J174 ON Semiconductor 功能相似 TO-226-3
P-channel silicon field-effect transistors
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J174 J174 Vishay Siliconix 功能相似 TO-92
P-channel silicon field-effect transistors
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J174 J174 Allegro MicroSystems 功能相似
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J174-E3 J174-E3 Vishay Semiconductor 功能相似 TO-92
Small Signal Field-Effect Transistor, P-Channel, Junction FET
J174-E3 J174-E3 Vishay Siliconix 功能相似 TO-92
Small Signal Field-Effect Transistor, P-Channel, Junction FET
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J177,126 J177,126 NXP 功能相似 TO-226-3
射频结栅场效应晶体管(RF JFET)晶体管 AMMORA FET-RFSS
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